A widely recognized phenomenon in the field is that the difference in wavenumber between the two vibration modes E 1 2g and A 1g of WS 2 exhibits a decreasing trend with the reduction in WS 2 thickness from bulk to few-layered structures [ 25 , 26 ].
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The Role of GaN in the Heterostructure WS<sub>2</sub>/GaN for SERS Applications.
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