High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics.

Nanomaterials (Basel) · 2023 · PMC10254242 · PMID 37299668

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an increasing trendno p-value reported

As the Al doping concentration increases, both E T-O and E O-T exhibit an increasing trend.

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a decreasing trendno p-value reported

However, the peak current densities show a decreasing trend.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/Al-Doped Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Nanofilms as Dielectrics.

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