InGaN Wurtize Quantum Dots It is widely recognized that InGaN alloys have now become the fundamental materials for the active regions of visible light-emitting diodes (LEDs), which are playing an increasingly significant part in the global advancement of solid-state illumination [ 56 , 57 , 58 , 59 ].Hence, it is highly significant to investigate the influence of electromechanical coupling on the optical characteristics of light-emitting diodes (LEDs) featuring InGaN/GaN quantum-dot (QD) active regions using computational modeling.
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State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots.
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