Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs.

Micromachines (Basel) · 2023 · PMC10456430 · PMID 37630050

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a pronounced trendno p-value reported

NBTI data demonstrated a pronounced trend—NBTI reliability is correlated with the N concentration of SiON layers, i.e., devices with a lower N content demonstrated a superior NBTI behavior (smaller Δ V t shifts and longer TTF values).

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