Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction.

Materials (Basel) · 2023 · PMC10456486 · PMID 37629915

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a notable trendno p-value reported

When etching with C 4 F 8 , a notable trend is observed where the SiO 2 etch rate increases with increasing pressure, while the ACL etch rate decreases.

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an interesting trendno p-value reported

When etching with CHF 3 , an interesting trend is observed.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Characterization of SiO<sub>2</sub> Plasma Etching with Perfluorocarbon (C<sub>4</sub>F<sub>8</sub> and C<sub>6</sub>F<sub>6</sub>) and Hydrofluorocarbon (CHF<sub>3</sub> and C<sub>4</sub>H<sub>2</sub>F<sub>6</sub>) Precursors for the Greenhouse Gas Emissions Reduction.

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