(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.

Nanomaterials (Basel) · 2023 · PMC10489961 · PMID 37686912

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may be significantno p-value reported

Put together, these results suggest that while there may be significant differences in the structural properties of heterostructures grown on sapphire or on h-BN templates, the temperature-dependent behavior and overall PL characteristics of UVC-emitting Al 0.3 Ga 0.7 N QDs/Al 0.7 Ga 0.3 N active regions remain comparable.

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