Correlation between oxygen flow-controlled resistive switching and capacitance behavior in gallium oxide memristors grown via RF sputtering.

Heliyon · 2023 · PMC10746488 · PMID 38144313

Europe PMC DOI

hedged sentence

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closest p

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an increasing trendno p-value reported

Notably, there is an increasing trend in the optical bandgap of Ga 2 O 3 films with an increase in the oxygen flow rate.

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