The device exhibited that with the increase in the gate gap length to 6 nm, BTBT decreased, gate leakage current decreased, the off current reduced, approaching unipolar operation, and the on/off ratio demonstrated an increasing trend.
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The device exhibited that with the increase in the gate gap length to 6 nm, BTBT decreased, gate leakage current decreased, the off current reduced, approaching unipolar operation, and the on/off ratio demonstrated an increasing trend.