Modeling of Optical Band-Gap Values of Mixed Oxides Having Spinel Structure AB₂O₄ (A = Mg, Zn and B = Al, Ga) by a Semiempirical Approach.

Such an expected trend is also in agreement with the trend observed in band-gap values calculated by using different DFT-based models. 33 For n -MGO samples, fewer experimental optical band-gap values have been reported in the literature, but two recent papers 37 , 63 report direct optical band-gap values of 5.03 eV for a partially inverse MGO single crystal 37 and of 5.15 eV for an MOCVD film 63 for which the inversion degree was not reported.

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