A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress.

Micromachines (Basel) · 2024 · PMC11051954 · PMID 38675313

Europe PMC DOI

hedged sentence

—

closest p

—

boldest claim

The sentences

highly significantno p-value reported

Additionally, the previous treatment of the tested devices is highly significant.

also in 132,142 other papers

Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.