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Control of Interface Migration in Nonequilibrium Crystallization of Li<sub>2</sub>SiO<sub>3</sub> from Li<sub>2</sub>O-SiO<sub>2</sub> Melt by Spatiotemporal Temperature and Concentration Fields.

ACS Omega · 2024 · PMC11097345 · PMID 38764668

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a decreasing trendno p-value reported
3.1.2 Application of Profiles 1 and 2 at the Left Boundary For case 1, when the temperature of the left boundary is held constant, it can be observed from Figure 4 a that |Δ g | shows a decreasing trend.

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an increasing trendno p-value reported
On the contrary, the model captured an increasing trend for both the left boundary and interface temperature, as can be observed from Figure 3 b when the adiabatic condition was implemented at the left boundary.

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