Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC.

Micromachines (Basel) · 2024 · PMC11123339 · PMID 38793173

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a decreasing trendno p-value reported

It can be clearly seen that as the pressure in the growth chamber gradually increases, the epitaxial growth rate gradually shows a decreasing trend.

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