Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications.

In addition, because most holes in the conducting channel are greatly influenced by the large number of remaining negative ions, no applicable τ i1 value is obtained in the DS device. Finally, we also need to mention that for the DS and ST devices, even with the increasing number of operation cycles, their ΔPSC response does exhibit a decreasing trend.

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