Alternatively, during preparation of V B – defect, the positive ions break the B–N bond such as ion implantation, 18 , 30 , 77 which may accept additional electrons. Probing this electron during the preparation of V B – defects may be significant in selectively designing single- and multidefect sites. 30 Therefore, the origin of the 10th electron will provide an important explanation on the symmetry of V B – defect and coupling tensor parameters.
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Hexagonal Boron Nitride Quantum Simulator: Prelude to Spin and Photonic Qubits.
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