Enhancing the Resistive Switching Properties of Transparent HfO<sub>2</sub>-Based Memristor Devices for Reliable Gasistor Applications.

Sensors (Basel) · 2024 · PMC11479299 · PMID 39409422

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closest p

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an increasing trendno p-value reported

As the sub-heater temperature increased from RT to 500 °C, the R a , R q , and R pv of ITO all showed an increasing trend.

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