Furthermore, Fe-doped 4H-SiC epitaxial layers, which are fabricated at lower temperatures using metal-organic CVD, demonstrate a notable trend: as the concentration of t-butylferrocene increases, the free carrier concentration progressively diminishes [ 200 ].
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A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics.
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