Ultralow-Resistance Contacts to Heavily Doped p-Type NbxW1-xSy Thin Films Grown by Atomic Layer Deposition.

ACS Appl Mater Interfaces · 2025 · PMC11843536 · PMID 39913873

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an interesting trendno p-value reported

37 As shown in Figure 7 d, the results reveal an interesting trend, where the work function actually decreases with increasing Nb concentration, going from x = 0.08 to 0.33.

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Ultralow-Resistance Contacts to Heavily Doped p-Type Nb<sub><i>x</i></sub>W<sub>1-<i>x</i></sub>S<sub><i>y</i></sub> Thin Films Grown by Atomic Layer Deposition.

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