Low-Pressure Chemical Vapor Deposition SiN<sub>x</sub> Process Study and Its Impact on Interface Characteristics of AlGaN/GaN MISHEMTs.

Micromachines (Basel) · 2025 · PMC12029809 · PMID 40283317

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a decreasing trendno p-value reported

As can be seen from the figure, the interface state density shows a decreasing trend as the defect energy level depth increases.

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Low-Pressure Chemical Vapor Deposition SiN&lt;sub&gt;x&lt;/sub&gt; Process Study and Its Impact on Interface Characteristics of AlGaN/GaN MISHEMTs.

The sentences

Low-Pressure Chemical Vapor Deposition SiN<sub>x</sub> Process Study and Its Impact on Interface Characteristics of AlGaN/GaN MISHEMTs.