As the V gs rose from −6 V to −3 V, the R ds values usually showed a decreasing trend, as shown in Figure 7 c.
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Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications.
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As the V gs rose from −6 V to −3 V, the R ds values usually showed a decreasing trend, as shown in Figure 7 c.