Nitrogen-doped Cu<sub>4</sub>O<sub>3</sub> thin films as high-performance counter electrodes for quantum dot-sensitized solar cells.

For films with x values from 0 to 30, both the anodic and cathodic currents, as well as the peak voltages, increase with increasing N content, while Δ V PP exhibits a decreasing trend, suggesting enhanced electrochemical kinetics.

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