Effect of Hafnium-Based Thin Film Thickness on Microstructure and Electrical of Yttrium-Doped Hafnium Oxide Ferroelectric Devices Prepared by Magnetron Sputtering.

Micromachines (Basel) · 2025 · PMC12471966 · PMID 41011955

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Leakage current density exhibited a decreasing trend with increasing film thickness, while the maximum polarization intensity gradually increased, reaching a maximum of 11.5 μC/cm 2 at 120 nm. magnetron sputtering hafnium oxide-based thin films yttrium doping thickness microstructure electrical properties Shaanxi Province key R & D program general pr

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