Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses.

Micromachines (Basel) · 2025 · PMC12565885 · PMID 41156383

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a decreasing trendno p-value reported

The device’s saturation current exhibits a decreasing trend, dropping from 0.208 A to 0.179 A after HPM stress.

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