Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) m (Sb2Te3) n.

ACS Appl Electron Mater · 2025 · PMC12573760 · PMID 41179279

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highly significantno p-value reported

Such results shed new light on the vacancy ordering of GeTe-rich GST, which are highly significant not only for phase-change memory applications, but also in the context of the recent breakthrough in GST ferroelectricity.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) &lt;sub&gt;&lt;i&gt;m&lt;/i&gt;&lt;/sub&gt; (Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt;) &lt;sub&gt;&lt;i&gt;n&lt;/i&gt;&lt;/sub&gt;.

The sentences

Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) <sub><i>m</i></sub> (Sb<sub>2</sub>Te<sub>3</sub>) <sub><i>n</i></sub>.