Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling.

This discrepancy suggests that the theoretical model, which assumes ideal conditions, does not fully account for recombination, interface states, or series resistance effects that are present in real devices. The ideality factor shows a decreasing trend with increasing temperature in both cases, which is characteristic of Schottky diodes.

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