Optimizing the crystallinity of ZrO<sub>2</sub> gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control.

Sci Rep · 2025 · PMC12647576 · PMID 41290954

Europe PMC DOI

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closest p

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an increasing trendno p-value reported

The results reveal an increasing trend in the dielectric constant with rising deposition temperature, attributed to the enhanced crystallinity achieved through the thermal energy provided during deposition.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Optimizing the crystallinity of ZrO&lt;sub&gt;2&lt;/sub&gt; gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control.

The sentences

Optimizing the crystallinity of ZrO<sub>2</sub> gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control.