An Overview on Formation of Radiation-Induced Interface Traps in Silicon-Based Devices.

Micromachines (Basel) · 2025 · PMC12654549 · PMID 41302796

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an increasing trendno p-value reported

As the density of E’ centers decreases, D it shows an increasing trend, and the saturation value of E’ change is within twice the saturation change of D it .

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