In Situ Raman Measurement of the Growth of SiCOH Thin Film Using Hexamethyl-Disiloxane (HMDSO) Mixture Source in Semiconductor Interconnection.

Micromachines (Basel) · 2025 · PMC12654620 · PMID 41302720

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an increasing trendno p-value reported

The FWHM of G after 90 s showed an increasing trend, which is thought to be due to the effect of SiCOH film thickness.

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