With the increase in Cu layer thickness, the carrier concentration and Hall mobility of the films gradually increased from 1.4 × 10 22 cm −3 and 0.3 cm 2 /V·s to 6.4 × 10 22 cm −3 and 1.4 cm 2 /V·s, respectively, and then the resistivity exhibited a decreasing trend.
← all excerpts
Microstructure and Optoelectronic Properties of WZO/Al/Cu/Al/WZO Multilayer Films.
1
—
—