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Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications.

Adv Mater · 2025 · PMC12710576 · PMID 41178162

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an increasing trendno p-value reported
[ 68 ] The study further presented an increasing trend of memory window when the channel length is scaled down (Figure 3a‐ii ).

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