Simulation Analysis of the Chemical Mechanical Polishing Process for Monocrystal 4H-Silicon Carbide Based on Molecular Dynamics.

Micromachines (Basel) · 2025 · PMC12735350 · PMID 41470516

Europe PMC DOI

hedged sentence

—

closest p

—

boldest claim

The sentences

an increasing trendno p-value reported

It can be seen that the Si-C bond keeps decreasing during simulation, while the Si-O and C-O show an increasing trend.

also in 63,971 other papers

Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.