Structure-Dependent Parameter Trade-Off Optimization on RonCoff and Power Compression of AlGaN/GaN HEMTs for RF Switch Application.

Micromachines (Basel) · 2026 · PMC12942892 · PMID 41753819

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closest p

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an increasing trendno p-value reported

Figure 4 a demonstrates a situation where the IL and ISO of the switching device both exhibit an increasing trend with the increase in L ds .

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Structure-Dependent Parameter Trade-Off Optimization on &lt;i&gt;R&lt;/i&gt;&lt;sub&gt;on&lt;/sub&gt;&lt;i&gt;C&lt;/i&gt;&lt;sub&gt;off&lt;/sub&gt; and Power Compression of AlGaN/GaN HEMTs for RF Switch Application.

The sentences

Structure-Dependent Parameter Trade-Off Optimization on <i>R</i><sub>on</sub><i>C</i><sub>off</sub> and Power Compression of AlGaN/GaN HEMTs for RF Switch Application.