Strain-engineered Si-doped Cs3Bi2I9 perovskite for high-performance MIM capacitors: a DFT study.

RSC Adv · 2026 · PMC13022761 · PMID 41909798

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highly significantno p-value reported

Initial electronic properties Analyzing electronic properties of systems is highly significant in reporting their potential in MIM capacitor applications.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Strain-engineered Si-doped Cs&lt;sub&gt;3&lt;/sub&gt;Bi&lt;sub&gt;2&lt;/sub&gt;I&lt;sub&gt;9&lt;/sub&gt; perovskite for high-performance MIM capacitors: a DFT study.

The sentences

Strain-engineered Si-doped Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> perovskite for high-performance MIM capacitors: a DFT study.