Solution-Processed High-k HfO<sub>2</sub> Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness.

Materials (Basel) · 2026 · PMC13208880 · PMID 42195592

Europe PMC DOI

hedged sentence

—

closest p

—

boldest claim

The sentences

a decreasing trendno p-value reported

Under the fitting conditions employed in this study, the proportion of oxygen vacancies exhibits a decreasing trend with increasing annealing temperature: following annealing at 350 °C, 400 °C and 450 °C, the relative proportions of oxygen vacancies obtained from the fitting were 17.9%, 13.0% and 12.9%, respectively.

also in 47,180 other papers

Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Solution-Processed High-k HfO&lt;sub&gt;2&lt;/sub&gt; Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness.

The sentences

Solution-Processed High-k HfO<sub>2</sub> Gate Insulator for High-Performance Indium-Zinc-Oxide Thin-Film Transistors: Optimisation of Annealing Temperature and Insulator Thickness.