Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application.

Nanoscale Res Lett · 2011 · PMC3211230 · PMID 21711708

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a possible trendno p-value reported

A significant memory window of 2.36 V has been achieved through a waiting time of 10 4 s with a possible trend of stabilization indicating charge confinement in Ge-NCs.

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