Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

Nanoscale Res Lett · 2011 · PMC3212061 · PMID 21892938

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practically significantno p-value reported

Dense arrays of Ge quantum dots (QD) are of importance to all practically significant applications in optoelectronics and microelectronics.

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