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Critical increase in Na-doping facilitates acceptor band movements that yields ~180 meV shallow hole conduction in ZnO bulk crystals.

Sci Rep · 2017 · PMC5341155 · PMID 28272444

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may be significantno p-value reported
In a band-conduction model, the resistivity is given by Arrhenius-type behavior: but the prefactor temperature dependency may be significant.

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