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Electronic and Optical Properties of Substitutional and Interstitial Si-Doped ZnO

Materials (Basel) · 2012 · PMC5449001

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an increasing trendno p-value reported
The experimental results also have an increasing trend from pure ZnO to Si-doped ZnO [ 15 ].

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.