Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes.

Materials (Basel) · 2017 · PMC5459134 · PMID 28772476

Europe PMC DOI

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a decreasing trendno p-value reported

For IQE values, 420 and 380 nm wavelength samples came in the 2nd and 3rd position, respectively, which showed a decreasing trend of potential barrier height around these V-pits.

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