Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.

Materials (Basel) · 2017 · PMC5553520 · PMID 28772972

Europe PMC DOI

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closest p

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an increasing trendno p-value reported

In the case of the AlO x gate dielectric, the capacitance value and the corresponding dielectric constant showed an increasing trend with the annealing temperature.

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