Observation of negative differential resistance in mesoscopic graphene oxide devices.

Finally, the NDR observed in the lateral GO devices is completely different from the noise and random peaks usually observed in the I-V characteristics of devices based on GO or other oxides, as the NDR peaks in this study are repeatable and follow a definite trend, unlike peaks due to random charge trapping and emission at high density of defect sites in GO or other oxides 49 .

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