Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.

Nanoscale Res Lett · 2018 · PMC6185875 · PMID 30315380

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an obvious trendno p-value reported

It can be seen that with a V d increase from 0.1 to 0.5 V, the band structure of TGTFET, UTFET, and LTFET has an obvious trend of bending.

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