High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.

Although the outer regions of the printed channel layer are relatively thicker, its influence on the electrical properties of TFTs may not be significant since these regions lie outside the channel region (region between the S/D electrodes), as indicated in Figure 4 c (lateral scan thickness profile).

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