Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer.

Nanomaterials (Basel) · 2019 · PMC6567279 · PMID 31060261

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an increasing trendno p-value reported

Compared with the control sample shown in Figure 2 a, the intensity of the Ge 2+ (GeO) peak decreases with the increase of La 2 O 3 passivation layer thickness, while the intensity of the LaGeO x peak shows an increasing trend.

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Quoted from the open-access full text in Europe PMC under the licence the publisher applied. The sentence is reproduced exactly as published; the emphasis is ours.

Electrical Properties and Interfacial Issues of HfO<sub>2</sub>/Ge MIS Capacitors Characterized by the Thickness of La<sub>2</sub>O<sub>3</sub> Interlayer.

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