Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiN<i>_x</i> for Low Temperature Thin Film Encapsulation.

However, an interesting trend is that the deposition rate is saturated at ~200 nm/min by LAPECVD, possibly indicating that majority of reactants, in particular ammonia, were decomposed by the plasma power of 600 W or larger at given gas pressure.

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On the contrary, the measured refractive index rather shows a slightly increasing trend along the laser beam propagation direction.

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