Comparative study of Er³⁺-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser deposition.

1a ), it follows a decreasing trend as a function of pressure in sputtered thin films whatever the RF power as it was already observed in the case of Ge-Sb-Se sputtered films 12 , 34 (Fig. 1b,c ).

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