Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials.

The μ ( T ) for the Sb-doped ZrNiSn 1- x Sb x crystals exhibits a decreasing trend with T , similar to the doped polycrystalline samples (Fig. 2a ).

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The μ ( T ) of the undoped ZrNiSn single crystal, which by nature does not have grain boundaries, still shows an increasing trend with T .

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