A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films.

Materials (Basel) · 2020 · PMC7503965 · PMID 32825397

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may not be significantno p-value reported

On the other hand, modulation of the Schottky barrier height and width at the interface between the ZnO layer and the Pt bottom electrode may not be significant due to the smaller band gap of ZnO compared to that of the uppermost layer of g- Al:ZnMgO.

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