Effect of Graphene Doping Level near the Metal Contact Region on Electrical and Photoresponse Characteristics of Graphene Photodetector.

Sensors (Basel) · 2020 · PMC7506932 · PMID 32824939

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an increasing trendno p-value reported

When the devices were annealed at 150 °C, an increasing trend of the Dirac voltage with channel length was significantly observed, while a negligible channel-length dependence was shown after 300 °C annealing.

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