On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas.

Nanomaterials (Basel) · 2020 · PMC7695004 · PMID 33172194

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an increasing trendno p-value reported

For the T wafer = 300 °C, R w shows an increasing trend for an increase in v ; however, only for the lowest σ F = 1.67%.

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marginally significantno p-value reported

In addition, interaction effects are found to be marginally significant.

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