Characterization of Electrical Traps Formed in Al<sub>2</sub>O<sub>3</sub> under Various ALD Conditions.

Materials (Basel) · 2020 · PMC7767157 · PMID 33352772

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a decreasing trendno p-value reported

an increasing trendno p-value reported

The permittivity and interface trap density as well as the breakdown voltage of the three films deposited at different ALD temperatures under a fixed purge time show an increasing trend with increasing temperature, whereas the films’ hysteresis and border trap density show a decreasing trend with increasing temperature.

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